An axis symmetric 2D description of the growth process of a single crystal hollow tube, grown from the melt, by pulling down method. Part 2.

Abstract

This paper is the second part of an axis symmetric 2D description of the process of a single crystal hollow tube growth by micro-pulling--down ($\muup$-PD) method. This part concerns the following aspects: temperature distribution and melt flow in the melt--crystal system (section 2); impurity distribution (section 3). Numerical investigation concerning the above aspects is given for the growth of a hollow silicon tube of inner radius equal to 4.28x10${}^{-3}$ [m] and outer radius equal to 4.72x10${}^{-3}$[m] by using COMSOL Multiphysics software. The advantage of this description and numerical investigation is that it helps to better understand the mass and heat transport as well the impurity dispersion in meniscus and in the tube wall.