An axis- symmetric 2D description of a single crystal micro fiber growth process from the melt, by micro- pulling- down method.Part 2

Abstract

This paper is the second part of an axis-symmetric 2D description of the process of a single crystal micro fiber growth by micro-pulling--down ($\mu$-PD) method. This part concerns the following aspects: temperature distribution and melt flow in the melt--crystal system (section 2); impurity distribution (section 3). Numerical investigations concerning the above aspects are given for the growth of a Si (silicon) fiber of radius equal to $1\cdot 10^{-4} \, [m]$ by using COMSOL Multiphysics software. The advantage of this description and the numerical investigation is that it helps better understand the mass and heat transport as well as the impurity dispersion in the meniscus. So it may help the improvement of the single-crystal fiber quality.